CZ-Si結晶成長における成長界面近傍温度の勾配 : バルク成長I
2000 年 27 巻 1 号 p. 3-
詳細
2000 年 27 巻 1 号 p. 3-
Temperature distribution in the Czochralski (CZ) Si crystal growth has been measured using a thermocouple of differential type. It is found that temperature gradient in the CZ-Si crystal growth increased with increasing the growth rate. The results obtained by the present measurement are al so compared with those obtained by the conventional measurement.
