Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Melt flow variations with adding boron into the silicon melts
K. TerashimaS. Nishimura
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2000 Volume 27 Issue 1 Pages 7-

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Abstract
The convention of silicon melts is activated widely with adding boron into the silicon melts. This variation enhances the resolution rate of crucible and evaporation rate of SiO from the melt surface. This is mainly due to the decrease of viscosity of melts.
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© 2000 The Japanese Association for Crystal Growth
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