Si(100)基板上へのc-GaNの成長 : エピタキシャル成長II
2000 年 27 巻 1 号 p. 27-
詳細
2000 年 27 巻 1 号 p. 27-
The growth of C-GaN on Si substrates has been carried out by using BP buffer layer. We have successfully grown C-GaN epitaxial layer on Si(100) substrates with 10×10mm^2 area. The growth of C-GaN on Si will be discussed.
