Abstract
The formation process of GaAs pyramids on GaAs (III) B patterned substrate was monitored in real-time by microprobe-RHEED/SEM installed in MBE chamber and the change in top size of truncated pyramid was measured. By changing As pressure, we could decrease and increase the top size in reversible manner. With this technique we could control the top size on which 3D structure can be fabricated.
