Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
MBE growth of GaMnAS grown by sequential deposition of GaAs,Mn
Ryuji Misawa, Yoshitaka Morishita, Katsuaki Sato
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2000 Volume 27 Issue 1 Pages 34-

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Abstract
In this work, we report on epitaxital growth of GaMnAS grown by sequential deposition of GaAs,Mn at low temperature. The GaMnAS grown by this method resulted in a higher Mn concentration than (Ga,Mn)As prepared by co-deposition method.
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© 2000 The Japanese Association for Crystal Growth
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