Lateral Wet Oxidation of AlAS Layer Grown on High Index GaAs Substrate by MBE

Abstract

The oxidation of AlAs was found to depend on its layer thickness. Our experiments showed that if the AlAS layer thickness was more than 100 nm, the oxidation followed a I -dimensional model, but if the thickness was from 10 to 100 nm, the characteristics didn't follow the model. The composition of Al_xGa_<1-x> As also affected the oxidation: a larger had faster oxide growth. If x exceeded 0.75, the oxide grew rapidly, but when x was between 0.45 and 0.75, there was little growth of the oxide.