成長中断時の条件変化がInGaP/GaAs界面構造に及ぼす影響のX線CTR散乱法による解析 : エピタキシャル成長III

浅岡 孝俊; 植田 善之; 田渕 雅夫; 竹田 美和; 土屋 忠厳; 坂口 春典

doi:10.19009/jjacg.27.1_38

浅岡孝俊, 植田善之, 田渕雅夫, 竹田美和, 土屋忠厳, 坂口春典

著者情報

ジャーナルフリー

2000 年 27 巻 1 号 p. 38-

DOI https://doi.org/10.19009/jjacg.27.1_38

詳細

抄録

InGaP/GaAs heterostructures grown by MOVPE were analyzed by X-ray CTR scattering measurement. Distributions of As and P at the interfaces were investigated with different growth temperatures and different atmospheres (i.e., H_2 AsH_3, and PH_3) during growth interruption. It was shown that the abruptness of the interfaces strongly depends on the growth condition.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）