Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Singular plane format ion in CdTe homoepitaxy
Y. YoshiokaK. ShimizuM. HaradaK. TakagakiM. Kasuga
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2000 Volume 27 Issue 1 Pages 44-

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Abstract
Surface of homoepitaxial CdTe layers was observed by atomic force microscope.to examine the step structure. There exist two kinds of characteristic facet, (111) and (100), whose shape and width vary with substrate plane orientation and the supersaturation of the source material. The larger the area of (111) facet, the more likely twins are formed
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© 2000 The Japanese Association for Crystal Growth
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