抄録
We carried out excess energy calculations for bulk InGaN, InGaN/GaN and lnGaN/InN in order to investigate the contribution of lattice constraint from the bottom layer to the compositional instability of InGaN. In the epi-layers, asynmetric nature of the excess energy curves as a function of composition is emphasized compared with that for bulk The results suggest that incorporating the contribution of the lattice constraint is indipensable to predict the compositional instability for InGaN grown on substrates.
