SiCバルク単結晶成長の現状 : 化合物(<特集>21世紀を担うバルク単結晶)

抄録

This paper reviews the recent development of single crystal silicon carbide (SiC) bulk crystal growth. The technological potential of SiC for high-power, high-temperature and high-frequency electronic devices has been recognized for several decades; however, such applications have been largely hindered by problems related to bulk crystal growth. The SiC bulk crystal growth technology has recently achieved drastic improvement and enabled the growth of large high quality single crystals. Due to the availability of large high quality substrates, progress in SiC thin film epitaxy and devices has been rapid, and application of SiC to many fields is fast reaching its real potential.