Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Crystal Growth of Thin Film Si for photovoltaic Devices : Single Crystal Si Growth(<Special Issue>Frontiers of Thin Film Crystal Growth for the New Millennium)
Takashi Ishihara
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2000 Volume 27 Issue 4 Pages 162-170

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Abstract
Solar cells are clean and renewable energy resources compared with conventional fossil oil or coal which causes the emission of carbon dioxide during convection and they are rapidly expanding to the world recently. The bulk crystalline Si solar cells that are mainly used at present have anxiety for the shortage of the supply of the substrate. Applicauon of Si thin film to solar cells are now drawing large attention for the possibility of decreasing the raw material consumption and realizing high conversion efficiency and high reliability. The key issues of the development are the selection of the substrate and the growth method. The selected substrate is not always able to use for the film growth under investigation because of its thermal properties and this means the performance of the device is affected by the selected substrate and consequently the growth method. It will be important to develop in the balance of the performance and the manufacturing cost in the future.
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© 2000 The Japanese Association for Crystal Growth
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