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Article type: Cover
2000 Volume 27 Issue 4 Pages
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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Article type: Index
2000 Volume 27 Issue 4 Pages
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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Article type: Index
2000 Volume 27 Issue 4 Pages
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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2000 Volume 27 Issue 4 Pages
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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Tatau Nishinaga
Article type: Article
2000 Volume 27 Issue 4 Pages
149-155
Published: October 25, 2000
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In the present paper, the contributions of crystal growth in the fabrication of the electronic and optical devices in the 20th century are reviewed first. The largest event that showed the importance of the crystal growth was the invention of transistor. Without single crystal of germanium, this invention might not be happened. The developments of various growth methods such as liquid phase epitaxy, molecular beam epitaxy and metal organic vapor phase epitaxy have made it possible to realize room temperature cw operation of semiconductor laser, inventions of high electron mobility transistor (HEMT), MQW lasers and blue/ultra-violet diode lasers . Basing on the above background, the prospects of the thin film growth in the 21st century were discussed. As the important subjects to be intensively studied, nano-structure fabrication, quantum mechanical approach of the crystal growth theory, heteroepitaxy of large lattice mismatched system, growth of important materials, crystal growth under microgravity in space and crystal growth for the solar battery are chosen and their prospects are described.
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Hiroshi Taniguchi, Hokuto Yamatsugu, Kazuto Igarashi, Hidemi Mitsuyasu ...
Article type: Article
2000 Volume 27 Issue 4 Pages
156-161
Published: October 25, 2000
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The rotational solidification of polycrystalline silicon has the advantage of the drastic costdown of solar cell and the spread of photovaltaic system to our life, because its process is essentially sliceless and continuous. The characteristics of the polycrystalline silicon wafer by this method were clarified as follows. (1) The crystal orientations are random, but each grains are columnar and grown to the vertical direction on the graphite substrate . (2) The wafer thickness decreases and the dendritic crystal growth disappears with the increase of rotating speed of cooled roller. On the other hand the grain sizes become smaller and the grain boundaries are distorted. (3) Conseqently, the solar cell fabricated on the polycrystalline silicon substrate which is grown for rotating speed of 0.5 rpm has the efficiency of 12.2%. Considering its productivity, this result is promissing for practical use.
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Takashi Ishihara
Article type: Article
2000 Volume 27 Issue 4 Pages
162-170
Published: October 25, 2000
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Solar cells are clean and renewable energy resources compared with conventional fossil oil or coal which causes the emission of carbon dioxide during convection and they are rapidly expanding to the world recently. The bulk crystalline Si solar cells that are mainly used at present have anxiety for the shortage of the supply of the substrate. Applicauon of Si thin film to solar cells are now drawing large attention for the possibility of decreasing the raw material consumption and realizing high conversion efficiency and high reliability. The key issues of the development are the selection of the substrate and the growth method. The selected substrate is not always able to use for the film growth under investigation because of its thermal properties and this means the performance of the device is affected by the selected substrate and consequently the growth method. It will be important to develop in the balance of the performance and the manufacturing cost in the future.
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Junichi Murota, Masao Sakuraba, Takashi Matsuura
Article type: Article
2000 Volume 27 Issue 4 Pages
171-178
Published: October 25, 2000
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Low-temperature epitaxial growth of high quality Si/ Si_<1-x>Ge_x /Si heterostructures at high Ge fractions on Si (100) is achieved by ultraclean low-pressure CVD using SiH_4 and GeH_4 gases. Lowering the Si_<1-x>Ge_x deposition temperatures and optimization of the Si_<1-x>Ge_x layer thickness are essential to prevent island growth and generation of misfit dislocations in the heterostructure at a higher Ge fraction. The SiH_4 and GeH_4 reaction rates are expressed by the Langrnuir-type equation, assuming that one SiH_4 or GeH_4 molecule is adsorbed at a single adsorption site, according to the Langmuir's adsorption isotherm, and decomposed there. It is found that the SiH_4 and GeH_4 adsorption rate constants become larger at the bond site of the Si-Ge pair than those at the others, while the SiH_4 surface reaction rate constant becomes the largest at the bond site of the Ge-Ge pair. With the B_2H_6 and PH_3 addition, changes of the deposition rate and the Ge fraction, and incorporation of B and P are also explained based on the modified Langmuir-type adsorption and reaction scheme associated with Henry's law, assuming that the high dopant partial pressure induces high coverage dopant adsorption which suppresses both the SiH_4 and GeH_4 adsorption/reaction on the surface.
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Akio Sasaki
Article type: Article
2000 Volume 27 Issue 4 Pages
179-185
Published: October 25, 2000
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Crystal growth of III-V semiconductors has been extensively studied. Some of growth technologies have been well developed. Thus, the article here focuses on currently interested subjects of III-V semiconductor crystal growth: self-assembled quantum structure, stacked layers of quantum structure, surfactant effects, and narrow band crystal for an infrared wavelength region. The quantum structures are naturally formed with Stranski-Krastanov growth mode, composition inhomogeneity, and/or mutual diffusion. The nucleation points of quantum dots must be controlled for device applications. They have been well controlled with the nanoscaled mask by scanning tunneling microscope or lithography. The surfactant is very useful means for the surface atomic arrangement and then thickness increase of flat layer, promotion of island formation, suppression of spontaneous ordering, and the likes. A large lattice mismatch causes the difficulty in growing a narrow band semiconductors on GaAs substrate. Two step growth, as a buffer layer is grown prior to a regular epitaxial growth, has improved quality of the epitaxial layer. III-V semiconductors are now expanding their device application fields year by year and are inevitable materials in microwave- and opto-electronics.
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Hiroyuki Matsunami, Tsunenobu Kimoto
Article type: Article
2000 Volume 27 Issue 4 Pages
186-193
Published: October 25, 2000
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Recent progress in SiC crystal growth is reviewed. Owing to rapid progress in sublimation techniques, reasonably high-quality 4H- and 6H-SiC{0001} wafers with a diameter of 2〜3 inches have been available, together with a wide range of conductivity control from highly-conducting to insulating properties. The micropipe (hollow-core dislocation) density has been reduced down to less than 1 cm^<-2> in the R & D level. Polytype-controlled epitaxial growth of 4H- and 6H-SiC has been achieved by utilizing step-flow growh on off-oriented SiC{0001} substrates, mainly by chemical vapor deposition (step-controlled epitaxy). High-purity and high-quality SiC epitaxial layers with a donor concentration of 1×10^<14> cm^<-3> have been produced, supporting recent development of SiC electronic devices. Novel faces, SiC (112^^-0) , which is parallel to the c-axis (<0001>) have provided newly emerging interest, because of the micropipe-free structure, the realization of high-quality homoepitaxy, and the excellent metal-oxidesemiconductor (MOS) characteristics on this face. Heteroepitaxy of 3C-SiC on Si substrates requires further improvement in the epilayer quality.
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Shiro Sakai
Article type: Article
2000 Volume 27 Issue 4 Pages
194-202
Published: October 25, 2000
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Growth of bulk and heteroepitaxial gallium nitride and related materials are reviewed. The status of a bulk growth both by high pressure and high temperature growth method and so-called sublimation is described. Both methods are not capable of growing large enough crystals to be used as a homoepitaxial substrate. The effects of dislocation on optical and structural properties are described. Recent new methods to reduce dislocation density in GaN are introduced. These new techniques can provide a large area alternatives of a bulk GaN for homoepitaxial substrate.
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Masashi Kawasaki
Article type: Article
2000 Volume 27 Issue 4 Pages
203-214
Published: October 25, 2000
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As a derivative of intensive research towards high T_c superconducting electronics, atomic scale control of oxide epitaxy has been challenged and is now realized so that one can tailor low dimensional heterostructures made out of various oxide compounds. Oxides involve versatile and gigantic physical properties such as 100% spin polarization, large binding energies in cooper pair or exciton, and electric-field-tunable dielectric property with huge ε. We show examples of atomic control in laser molecular beam epitaxy (MBE) of oxides to realize devices with novel functionalities, where epitaxy dynamics is controlled into two, one and zero dimensions. Finally, an approach is presented for the acceleration of these researches by orders of magnitude; combinatorial methodology developed for an eeicient way of new drag discovery is incorporated into our laser MBE technology to accomplish parallel synthesis and high throughput characterization of lattice engineered oxide superlattices integrated on a substrate.
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M.W. Cho, Takafumi Yao
Article type: Article
2000 Volume 27 Issue 4 Pages
215-224
Published: October 25, 2000
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This article review recent progresses in molecular beam epitaxy of widegap II-VI compounds with emphasis placed on emerging novel materials of Be chalcogenides. BeZnMgSe alloys have compatible bandgap with ZnMgSSe alloys, however, with superior structural and optical properties and much better controllability of alloy composition. Furthermore, BeTe, which closely lattice matches with GaAs and ZnSe, can be heavily doped into p-type conductivity, which would offer good Ohmic contact layer in the devices. Those features demonstrate that the performances of light emitting devices would be greatly improved when Be chalcogenides are used in the devices.
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Hiroo Munekata
Article type: Article
2000 Volume 27 Issue 4 Pages
225-231
Published: October 25, 2000
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The research efforts for conventional paramagnetic diluted magnetic semiconductors have yielded a class of new alloy semiconductor materials whose magnetic properties are strongly correlated with their electrical conduction. This paper reviews the present status and future prospects of such alloy semiconductors named "magnetic alloy semiconductors" composed primarily of technologically important III-V compound semiconductors and transition metals.
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H. Katayama-Yoshida, K. Sato, R. Kato, T. Yamamoto
Article type: Article
2000 Volume 27 Issue 4 Pages
232-240
Published: October 25, 2000
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We propose a new valence control method of codoping for the fabrication of low-resistivity p-type ZnO and GaN by ab initio electronic structure calculations. We compare our predictions of codoping with the recent successful codoping experiments for the fabrication of the low-resistivity p-type wide band-gap semiconductors . We have also proposed materials design to fabricate a transparent ferromagnet with transition atom doped ZnO and GaN, combined with the new valence control method of codoping. Based upon the calculation, we propose both the valence control method for the electronics and spin control method for the spintronics.
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Atsushi Oshiyama, Sukmin Jeong
Article type: Article
2000 Volume 27 Issue 4 Pages
241-249
Published: October 25, 2000
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We review our first-principles calculations performed in order to clarify mechanisms of epitaxial growth on Si ( 100) surfaces. A brief explanation on the density functional theory is given. The calculations provide microscopic pictures of the diffusion of a Si adatom on terraces and near step edges. It is found that capture and release of hydrogen atoms by the adatom are important processes in the diffusion. Difference and similarity between Ge and Si adatoms are also clarified.
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Kenji Shiraishi, Norihisa Oyama, Ko Okajima, Kyozaburo Takeda, Hiroshi ...
Article type: Article
2000 Volume 27 Issue 4 Pages
250-256
Published: October 25, 2000
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We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and the misfit-dislocations (MDs). This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs (110) obtained by this procedure is in good agreement with the experimentally obtained value.
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Thomas F. Kuech
Article type: Article
2000 Volume 27 Issue 4 Pages
257-
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
258-262
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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Article type: Appendix
2000 Volume 27 Issue 4 Pages
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Article type: Cover
2000 Volume 27 Issue 4 Pages
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