Abstract
Recent progress in SiC crystal growth is reviewed. Owing to rapid progress in sublimation techniques, reasonably high-quality 4H- and 6H-SiC{0001} wafers with a diameter of 2〜3 inches have been available, together with a wide range of conductivity control from highly-conducting to insulating properties. The micropipe (hollow-core dislocation) density has been reduced down to less than 1 cm^<-2> in the R & D level. Polytype-controlled epitaxial growth of 4H- and 6H-SiC has been achieved by utilizing step-flow growh on off-oriented SiC{0001} substrates, mainly by chemical vapor deposition (step-controlled epitaxy). High-purity and high-quality SiC epitaxial layers with a donor concentration of 1×10^<14> cm^<-3> have been produced, supporting recent development of SiC electronic devices. Novel faces, SiC (112^^-0) , which is parallel to the c-axis (<0001>) have provided newly emerging interest, because of the micropipe-free structure, the realization of high-quality homoepitaxy, and the excellent metal-oxidesemiconductor (MOS) characteristics on this face. Heteroepitaxy of 3C-SiC on Si substrates requires further improvement in the epilayer quality.
