Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Dimension Controlled Epitaxy of Oxides for Realizing Novel Devices : Compound Semiconductor Crystals(<Special Issue>Frontiers of Thin Film Crystal Growth for the New Millennium)
Masashi Kawasaki
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2000 Volume 27 Issue 4 Pages 203-214

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Abstract
As a derivative of intensive research towards high T_c superconducting electronics, atomic scale control of oxide epitaxy has been challenged and is now realized so that one can tailor low dimensional heterostructures made out of various oxide compounds. Oxides involve versatile and gigantic physical properties such as 100% spin polarization, large binding energies in cooper pair or exciton, and electric-field-tunable dielectric property with huge ε. We show examples of atomic control in laser molecular beam epitaxy (MBE) of oxides to realize devices with novel functionalities, where epitaxy dynamics is controlled into two, one and zero dimensions. Finally, an approach is presented for the acceleration of these researches by orders of magnitude; combinatorial methodology developed for an eeicient way of new drag discovery is incorporated into our laser MBE technology to accomplish parallel synthesis and high throughput characterization of lattice engineered oxide superlattices integrated on a substrate.
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© 2000 The Japanese Association for Crystal Growth
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