II-VI族化合物半導体の分子線エピタキシー薄膜 : 化合物半導体結晶(<特集>21世紀を拓く薄膜結晶成長)

抄録

This article review recent progresses in molecular beam epitaxy of widegap II-VI compounds with emphasis placed on emerging novel materials of Be chalcogenides. BeZnMgSe alloys have compatible bandgap with ZnMgSSe alloys, however, with superior structural and optical properties and much better controllability of alloy composition. Furthermore, BeTe, which closely lattice matches with GaAs and ZnSe, can be heavily doped into p-type conductivity, which would offer good Ohmic contact layer in the devices. Those features demonstrate that the performances of light emitting devices would be greatly improved when Be chalcogenides are used in the devices.