Abstract
We propose a new valence control method of codoping for the fabrication of low-resistivity p-type ZnO and GaN by ab initio electronic structure calculations. We compare our predictions of codoping with the recent successful codoping experiments for the fabrication of the low-resistivity p-type wide band-gap semiconductors . We have also proposed materials design to fabricate a transparent ferromagnet with transition atom doped ZnO and GaN, combined with the new valence control method of codoping. Based upon the calculation, we propose both the valence control method for the electronics and spin control method for the spintronics.
