2000 Volume 27 Issue 4 Pages 250-256
We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and the misfit-dislocations (MDs). This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs (110) obtained by this procedure is in good agreement with the experimentally obtained value.