Abstract
The effects of the argon gas flow rate and furnace pressure on the oxygen concentrations in Czochralski (CZ) and transverse magnetic field applied Czochralski (TMCZ) silicon single crystals were examined through experimental crystal growth. The oxygen concentrations in the grown crystals were varied based on the changes of the furnace pressure and the argon gas flow rate . The oxygen concentrations were directly proportional in the CZ crystals and inversely proportional in the TMCZ crystals to the calculated flow velocity of argon gas. To explain the CZ results, newly proposed melt flow pattern model based on the melt flow pattern changes by the argon gas shear stress is applicable. Some numerical simulation works supported by a model experiment with alternative materials confirmed the effects of argon gas shear stress. For the TMCZ results, conventional SiO partial Pressure model or boundary layer thickness model can be applied due to the increased effective viscosity of silicon melt by the magnetic field.
