Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Marangoni Effect and Oxygen Transport in a Small Silicon Cz Furnace(<Special Issue>Material Transport of Vapor-Liquid Interface during Crystal Growth and Effect on Crystal Quality)
Nobuyuki ImaishiMingWei LiTakao Tsukada
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2000 Volume 27 Issue 5 Pages 281-287

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Abstract
This article discusses the influence of the Marangoni effect on melt flow and oxygen transport in a small silicon Czochralski furnace, based on recent results of global simulation conducted by the authors. Oxygen transfer rate is controlled by the mass-transfer resistances in melt and gas phases. The Marangoni effect exerts a significant change of flow pattern of melt near the gas/liquid interface. The Marangoni effect takes an important roll in modulating the distributions of temperature and oxygen concentration near the interface and consequently the over-all oxygen transport rate. Installing a heat shield provides large shear stress onto the melt surface from the gas flowing along.The Marangoni effect counteracts the stress and minimizes the induced eddy flow and increases oxygen evaporation rate.
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© 2000 The Japanese Association for Crystal Growth
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