抄録
The main purpose of this article is to describe a recent improvement of Ge crystal growth on nanometer scale. It has been reported that small amount of C atoms have a key role for controlling size and structure of the Ge dot. First, the effect of the C atoms deposited on the Si(100) substrates is reviewed. The C atoms were found to form Si-C alloy layer, on which the Ge growth mode was modified. Second, we propose a multi-step procedure on the basis of AFM and TEM characterization. Our key point is that the C submonolayers were incorporated at the interface between Ge wetting layers and Ge dot. This procedureachieves to control Ge dot size, structure and density on the Si(100) substrate.
