Atomic Steps on the Single Crystal Surface during Epitaxy, Sublimation and Gas Reaction(<Special Issue>Recent Trend of Crystal Growth Theory)
2002 年 29 巻 1 号 p. 39-43
詳細
2002 年 29 巻 1 号 p. 39-43
Structural transitions on silicon surfaces during growth and oxygen exposure were investigated by in situ ultra-high vacuum reflection electron microscopy and atomic force microscopy. Consequent stages of gold three dimensional island ordering on silicon (111) surfaces were visualized over a wide temperature range of the substrate. Initial stages of surface oxidation and thermal etching were analysed in details.
