SnO_2 thin films were deposited by thermal Chemical Vapor Deposition (CVD) under micro-gravity (μg) utilizing parabolic flight of airplane and compared with films deposited under normal gravity (1g) environment. The films were deposited on Si substrates at the substrate temperature of 500℃ for 13seconds from the reactant gas of SnCl_4 and O_2 transported by Ar carrier gas It is found that SnO_2 thin film thickness deposited under μg is flatter than that under lg. The results were discussed with the carrier gas flow pattern obtained from the visualization experiment using a drop tower as well as the simulation calculation results by SIMPLE approximation.
