抄録
Reaction at the interface between Ba-doped silica crucible and Si melt for Czochralski Si (CZ-Si) crystal growth has been studied. It is found that appropriate Ba-doping in a silica crucible results in a remarkable effect on suppression of formation of the so-called brownish rings at the interface. This kind of silica crucible is expected to enhance the growth yield in CZ-Si crystal growth.
