25aB02 相変化メモリトランジスタと結晶成長(相変化記録,第34回結晶成長国内会議)
2004 年 31 巻 3 号 p. 123-
詳細
2004 年 31 巻 3 号 p. 123-
We have proposed and demonstrated a memory transistor that has two functions of nonvolatile memorizing and electron current controlling (switching) using phase change (PC) and nanometer size effects. We have prototyped the transistor using the PC channel, that was made of GeSbTe with a thickness of 50nm. We also describe fine crystallizing for the primary functions of the transistor.
