25aB04 InP液相成長による無転位ELO層形成(半導体エピ(1),第34回結晶成長国内会議)
2004 年 31 巻 3 号 p. 125-
詳細
2004 年 31 巻 3 号 p. 125-
The epitaxial lateral overgrowth (ELO) was performed on {001} oriented InP by liquid phase epitaxy at constant growth temperature (650℃). In this work, line and space (L & S) and L-shaped patterns were formed on substrates before epitaxy. In L & S pattern, etch pits were observed on open seed region and coalescence region. However, in L-shaped pattern, etch pits were observed only at the open seed region. Then, the mechanism of coalescence of ELO layers is discussed in L & S and L-shaped patterned.
