抄録
InAs_xSb_<1-x> ternary layers were grown on GaAs(001) substrate by hot wall epitaxy. When increasing As reservoir temperature, the growth rate decreased from 1.1 to 0.5μm/hr. It is found that three dimensional growth has been observed due to large lattice mismatch between the substrate and the ternary layers. By increasing As reservoir temperature from 220 to 280℃, the compositional ratio (x) of InAs_xSb_<1-x> layers can be controlled in the range between 0.02 and 0.81.
