抄録
Thick AlGaN with high AlN molar fraction and low dislocation density has been grown on the rugged AlN by low-pressure metalorganic vapor phase epitaxy. The density of threading dislocation (TD) in AlGaN layer was 8.8×10^7cm^<-2>, which is two orders of magnitude lower than that of conventional AlGaN. The reduction of TD density is due to lateral growth of AlGaN on the rugged AlN.
