Abstract
We have developed the growth technology for InGaAs ternary bulk crystal using the zone growth method. We have already found that this growth method makes it possible to get an InGaAs single crystal with uniform composition. In this paper, the growth method of an InGaAs seed crystal for the zone growth method, the production method of an InGaAs source for the zone growth method, and the InGaAs zone growth method are described. In addition, the new InGaAs zone growth method, in which a GaAs single crystal with preferential orientation is a seed for InGaAs zone growth, is reported.
