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2005 Volume 32 Issue 1 Pages
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2005 Volume 32 Issue 1 Pages
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2005 Volume 32 Issue 1 Pages
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Kazuo Nakajima
Article type: Article
2005 Volume 32 Issue 1 Pages
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Yasuhiro Hayakawa, Yusuke Mori
Article type: Article
2005 Volume 32 Issue 1 Pages
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Fumio Kawamura, Minoru Kawahara, Masanori Morishita, Hidekazu Umeda, Y ...
Article type: Article
2005 Volume 32 Issue 1 Pages
3-9
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The growth of large size GaN single crystals with low dislocation density was succeeded by applying the Liquid Phase Epitaxy (LPE) technique and some improvements for the Na flux methods. We examined the conditions at which GaN are grown in the Na flux and found that Na promotes the solubility of nitrogen against the Ga-Na melt due to strong power to reduce the nitrogen states. We review our attempts for the growth of large GaN single crystals and understanding growth mechanism in the alkali-based flux system.
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Shigeo Ohira, Masayuki Yoshioka, Takamasa Sugawara, Kazuo Nakajima, To ...
Article type: Article
2005 Volume 32 Issue 1 Pages
10-14
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The results of GaN formation on the surface of β-Ga_2O_3 single crystalline by nitridation is shown for the application of the substrates of the nitride semiconductors. β-Ga_2O_3 single crystalline was prepared by floating zone method, and its polished (100) plane was nitrided in NH_3 gas at 850℃ for 5 hours. It was demonstrated that polycrystal GaN with hexagonal structure was produced in the surface of β-Ga_2O_3, and the thickness of layers was approximately 50nm. High resolution TEM observation indicated that the synthesized GaN was composed of the aggregation with GaN particles, whose sizes range from 〜5nm to 〜50nm, and a GaN particle consists of defect free single crystalline. This method could be expected as a new route to prepare the bulk GaN substrate.
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Akira Yoshikawa, Yuji Kagamitani, Tsuguo Fukuda
Article type: Article
2005 Volume 32 Issue 1 Pages
15-19
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Bulk Crystal growth of ZnO by hydrothermal method is introduced and its application to GaN crystal growth (ammonothermal method) is also presented with a primitive growth results. 2 inch ZnO single crystal was grown by Tokyo Denpa Co. Ltd. FWHM of X-ray rocking curve of this sample gives 19 second, which suggests its high crystallinity. This is due to the feature of the solvothermal method. As it is performed under moderate temperature region, the moderate thermal condition gives less thermal stress toward the grown crystal. These results motivate us to establish the growth system of GaN by ammonothermal method.
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Kazuhito Kamei, Shigeru Inoue, Yutaka Itoh
Article type: Article
2005 Volume 32 Issue 1 Pages
20-23
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Growth behavior of single crystalline AlN from Cu-Al-Ti solution under the atmospheric pressure of nitrogen has been studied. The AlN nucleates epitaxially on the 6H-SiC substrate by super-cooling the solution heated to 1500-1600℃ by 700℃-800℃. The thick (8μm) AlN single crystalline film obtained by the cooling technique exhibited relatively low dislocation density such as 10^5/cm^2 near the growth surface. The growth rate was typically 2μm/hr. By placing the seed 6H-SiC wafer under the temperature gradient of 50℃/cm in the solution, we have grown the thick (10μm) AlN film with good crystallinity, which may pave the way to the continuous growth of AlN single crystal. High resolution TEM observation of the AlN/6H-SiC interface revealed the excellent coherency between these two materials.
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Shinsuke Fujiwara
Article type: Article
2005 Volume 32 Issue 1 Pages
24-29
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The growth technique for bulk ZnSe single crystals was developed to prepare the substrates for light-emitting-devises in blue color region and white color. CVT method, by which conductive ZnSe can be obtained, was selected for the growth technique. Rotational CVT method was developed, since conventional CVT method suffers instable growth caused by convective mass transport. As a result, large ZnSe single crystals with 30mm in diameter and 25mm in thickness were successfully obtained. The etch-pit-density was as small as 5×10^3〜3×10^4cm^<-2>, which is sufficiently small for the fabrication of LEDs.
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Tetsuo Ozawa, Masashi Kumagawa, Yasuhiro Hayakawa
Article type: Article
2005 Volume 32 Issue 1 Pages
30-35
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This paper describes the numerical analysis and the growth of In_xGa_<1-x>As ternary bulk crystals by rotational Bridgman method for potential applications to thermal-photo-voltaic devices. The relationship between the ampoule rotation rate and temperature distribution in the solution has been calculated. By increasing the ampoule rotation rate, the flow velocity in the solution has been increased and the temperature distribution has become uniform. In_xGa_<1-x>As (x=0.03-0.12) bulk crystals with homogeneous composition have been grown by supplying GaAs source continuously to the solution during the growth. In order to decrease the lattice mismatch between the substrate and the grown crystal, multi-step method has been performed.
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Yoshito Nishijima, Kazuo Nakajima
Article type: Article
2005 Volume 32 Issue 1 Pages
36-43
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We have developed the growth technology for InGaAs ternary bulk crystal using the zone growth method. We have already found that this growth method makes it possible to get an InGaAs single crystal with uniform composition. In this paper, the growth method of an InGaAs seed crystal for the zone growth method, the production method of an InGaAs source for the zone growth method, and the InGaAs zone growth method are described. In addition, the new InGaAs zone growth method, in which a GaAs single crystal with preferential orientation is a seed for InGaAs zone growth, is reported.
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Tadashi Ohachi
Article type: Article
2005 Volume 32 Issue 1 Pages
44-45
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Article type: Appendix
2005 Volume 32 Issue 1 Pages
46-49
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Article type: Appendix
2005 Volume 32 Issue 1 Pages
50-51
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Article type: Appendix
2005 Volume 32 Issue 1 Pages
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2005 Volume 32 Issue 1 Pages
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2005 Volume 32 Issue 1 Pages
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2005 Volume 32 Issue 1 Pages
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2005 Volume 32 Issue 1 Pages
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