17pB08 Epitaxial growth and characterization of BP(100) on Si(100) substrate(NCCG-35)

Abstract

Today, the substrates using for the study of c-GaN growth are mainly GaAs and 3C-SiC wafer. However, these have a large lattice mismatch, about 20% and 3.3% respectively. In our study, Boronmonophosphide grown on Si(100) by MOCVD is using for c-GaN substrate. The lattice mismatch between BP(100) and c-GaN(100) is about 0.7%. The growth and characterization of BP epitaxial wafer using for the growth of c-GaN substrate will be reported at the meeting.