Growth of InAs Quantum Dots on InP (001) by Metalorganic Vapor-Phase Epitaxy for Broadband Semiconductor Optical Amplifier Applications(<Special lssue>Practical Use of Quantum Dots to Various Applications)

Abstract

Quantum-dot semiconductor optical amplifiers (QD SOAs) are attractive as broadband amplification for coarse WDM (CWDM) applications. In this paper, we report the growth of InAs QDs on InGaAsP/InP (001) by metalorganic vapor-phase epitaxy aiming at QD-SOA application. Stacked high-density InAs QDs/InGaAsP with a 1.6-μm emission were obtained, and 170-nm broadband amplification characteristic was demonstrated by QD SOAs. In order to control a shape of QDs and to realize polarization-insensitive QD SOAs, columnar QDs were fabricated using closely-stacked small-size QDs grown at low temperatures.