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2006 Volume 33 Issue 2 Pages
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Article type: Index
2006 Volume 33 Issue 2 Pages
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Article type: Index
2006 Volume 33 Issue 2 Pages
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2006 Volume 33 Issue 2 Pages
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2006 Volume 33 Issue 2 Pages
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2006 Volume 33 Issue 2 Pages
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Kazumasa Hiramatsu
Article type: Article
2006 Volume 33 Issue 2 Pages
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Shigeya Naritsuka
Article type: Article
2006 Volume 33 Issue 2 Pages
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Kenichi Kawaguchi, Mitsuru Ekawa, Tomoyuki Akiyama, Ayahito Uetake, Na ...
Article type: Article
2006 Volume 33 Issue 2 Pages
83-88
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Quantum-dot semiconductor optical amplifiers (QD SOAs) are attractive as broadband amplification for coarse WDM (CWDM) applications. In this paper, we report the growth of InAs QDs on InGaAsP/InP (001) by metalorganic vapor-phase epitaxy aiming at QD-SOA application. Stacked high-density InAs QDs/InGaAsP with a 1.6-μm emission were obtained, and 170-nm broadband amplification characteristic was demonstrated by QD SOAs. In order to control a shape of QDs and to realize polarization-insensitive QD SOAs, columnar QDs were fabricated using closely-stacked small-size QDs grown at low temperatures.
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Yoshitaka Okada
Article type: Article
2006 Volume 33 Issue 2 Pages
89-93
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Recently, quantum dots have attracted significant attention as a possible means of exploiting the below-bandgap photons to generate additional photocurrents beyond that corresponding to band-to-band transition in bulk, and hence higher efficiencies in solar cells. In order to achieve this goal, fabrication technique to obtain a sufficiently high density as well as good size homogeneity of quantum dots is a prerequisite. It is known for sometime that multi-layer stacking of self-organized quantum dots is a promising way of increasing the total dot density. However, an increased number of stacking, typically more than 10 layers in InAs quantum dots/GaAs system, generally leads to degrading size uniformity and optical properties, which is due to accumulation of internal strain with increasing number of quantum dot layers. Our approach is to realize a multi-layer InAs quantum dot superlattice structure by strain compensation technique, and integrate into p-i-n solar cells.
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Norio Murase
Article type: Article
2006 Volume 33 Issue 2 Pages
94-100
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The physical and chemical properties of emitting semiconductor quantum dots are introduced. The preparation methods in solution are described and the formation mechanism based on the Ostwald ripening is explained quantitatively. Sol-gel methods are developed for a purpose to incorporate the prepared emitting quantum dots to glass matrices with high concentration. Bulk, powder and thin glass film with sufficient emission efficiencies are prepared by considering the surface chemistry of the quantum dots. These new types of phosphor are expected to be used for lightings, display and biomarkers.
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Takaaki Mano, Nobuyuki Koguchi
Article type: Article
2006 Volume 33 Issue 2 Pages
101-105
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We demonstrate self-assembly of nanoscopic GaAs ring complexes in a lattice-matched system by using the droplet epitaxy technique. Focusing on the complicated crystallization mechanisms of the droplets, we have successfully created 'single rings' and 'concentric double rings' by supplying controlled As_4 flux to the hemispherical Ga droplets. Moreover, we have found that the size of these rings can be tuned by adjusting the processes of the droplet formation and the crystallization. Thus, we can form unstrained, highly controlled nanoscopic ring complexes, which are ideal for the further understandings of quantum interference phenomena specifically found in the semiconductor quantum rings.
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Woo Sik Lee, Shinsuke Miyake, Shingo Fuchi, Toru Ujihara, Yoshikazu Ta ...
Article type: Article
2006 Volume 33 Issue 2 Pages
106-110
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Wideband light sources are expected for practical use to various applications. In particular, a novel cross-sectional imaging technique, i.e., optical coherence tomography (OCT) of which resolution is determined by FWHM of emission spectrum is an urgent demand. As realization of the wideband light sources, we propose quantum dots (QDs) with intentionally broadened size and composition distributions. We fabricated InAs QDs on InP substrate by droplet hetero-epitaxy. We also fabricated InP and InAsP QDs on GaInP lattice-matched to GaAs. InAs QDs on InP showed the central wavelength at 1,600nm and the FWHM of 400nm, respectively. InP and InAsP QDs on GaInP showed the central wavelength at 760nm and 845nm, and the FWHM of 55nm and 100nm, respectively. In particular, the central wavelength and the FWHM value of InAsP QDs should improve the resolution of OCT by 4-5 times from the conventional one.
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Etsuro Yokoyama
Article type: Article
2006 Volume 33 Issue 2 Pages
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[in Japanese]
Article type: Article
2006 Volume 33 Issue 2 Pages
111-112
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[in Japanese]
Article type: Article
2006 Volume 33 Issue 2 Pages
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[in Japanese]
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2006 Volume 33 Issue 2 Pages
112-113
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toru Ujihara
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2006 Volume 33 Issue 2 Pages
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Article type: Appendix
2006 Volume 33 Issue 2 Pages
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2006 Volume 33 Issue 2 Pages
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Article type: Appendix
2006 Volume 33 Issue 2 Pages
116-117
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Article type: Appendix
2006 Volume 33 Issue 2 Pages
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Article type: Appendix
2006 Volume 33 Issue 2 Pages
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Article type: Appendix
2006 Volume 33 Issue 2 Pages
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Article type: Appendix
2006 Volume 33 Issue 2 Pages
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Article type: Appendix
2006 Volume 33 Issue 2 Pages
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Article type: Appendix
2006 Volume 33 Issue 2 Pages
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