Theoretical investigations for the early stages of the epitaxial growthof the various face of the nitrides and ZnO(<Special Issue> Stable or Metastable: Zinc Blende and Wurtzite Structures)

Abstract

Theoretical approach for the epitaxial growth of GaN, ZnO and related compound semiconductors having the wurtzite structure is introduced. In this review, we introduce the results for GaN (0001), ZnO (0001), GaN (1120), ZnO (1120), GaN (1010), ZnO (1010), GaN/sapphire (0001), AlN/sapphire (0001), InN/sapphire (0001), ZnO/sapphire (0001), GaN/SiC (0001), ZnO/SiC (0001) and ZnO/SiC (0001). In the theoretical approach, the first principles density functional theory calculation has been used to obtain the potential energy surface for the supplied adatom during the epitaxy. The kinetic Monte Carlo simulation has been also used for the confirmation of the anisotropic morphology formation.