Abstract
We investigated the growth conditions of cubic GaN (c-GaN) by ab initio based approach which incorporates free energy of vapor phase. It is known that a c-GaN is a meta-stable phase and wurtzite GaN (h-GaN), which is a stable phase of GaN, is easily incorporated in the c-GaN crystal during growth. h-GaN is formed in the area grown on {111} facet plane. In the present study, therefore, we studied the growth conditions of {111} facet formation in order to clarify the conditions of h-GaN incorporation. The results suggest that we can suppress the {111} facet formation, i.e., h-GaN mixing, by controlling the growth conditions such as temperature and gallium beam equivalent pressure.
