Abstract
We have studied the wurtzite (W)-zincblende (ZB) polytypism in ZnSe films grown the GaAs (111) A-(2×2) substrate. While the stable structure of bulk ZnSe is ZB, W-structured ZnSe is formed near the interface on the ZB-structured GaAs (111) A substrate. Our first-principles calculations have revealed that the charge state at the ZnSe/GaAs (111) A interface plays a key role in the formation of W-ZnSe. In addition, we show that the structural quality of W-ZnSe is significantly improved using a cracked Se-source, while ZB-ZnSe is grown using a vicinal GaAs (111) A substrate.
