Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Organic Single-crystal Field-effect Transistors(<Special Issue>Crystal Growth of Organic Semiconductors toward Applications in Electronics)
Jun Takeya
Author information
JOURNAL FREE ACCESS

2009 Volume 35 Issue 4 Pages 262-270

Details
Abstract

Development of organic semiconductor transistors is under rapid progress, motivated by their potential applications to next-generation low-cost electronic devices. This article describes "organic single-crystal" transistors, in which systems of periodically arranged molecules govern the charge transport. Therefore, more ideal transistor performance can be expected without disordered structures and/or grain boundaries which most of popular thin-film transistors suffer. The best mobility of the single-crystal transistors indeed reach as high as 40cm^2/Vs, which is one order higher than those of the best polycrystalline devices. I discuss herein the fabrication method of the single-crystal transistors, the high-performance characteristics, and the mechanisms to realize the high conductivity based on results of our Hall effect measurements.

Content from these authors
© 2009 The Japanese Association for Crystal Growth
Previous article Next article
feedback
Top