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Article type: Cover
2009 Volume 35 Issue 4 Pages
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Article type: Index
2009 Volume 35 Issue 4 Pages
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Article type: Index
2009 Volume 35 Issue 4 Pages
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Article type: Index
2009 Volume 35 Issue 4 Pages
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Article type: Appendix
2009 Volume 35 Issue 4 Pages
223-225
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Kiyoshi Yase
Article type: Article
2009 Volume 35 Issue 4 Pages
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Yasukiyo Ueda, Tethuhiro Kato, Hiroki Kihara, Yasuko Koshiba, Kenji Ki ...
Article type: Article
2009 Volume 35 Issue 4 Pages
227-233
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There are many attempts for fabrication of organic EL, organic solar cell, and organic FET using organic semiconductor and polymer. In order to enhance the device performance, the orientation control for each purpose is necessary. In this report, we demonstrate the crystal growth of organic molecules on a friction-transfer polymer layer and FET application.
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Yuji Yoshida, Masahiro Misaki, Nobutaka Tanigaki, Kiyoshi Yase
Article type: Article
2009 Volume 35 Issue 4 Pages
234-242
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On the basis of crystal growth techniques, we have attempted to prepare novel organic light-emitting diodes (OLED), polarized OLED by utilizing polymer templates for orientational growth of OLED materials. Oligophenylenes and polyfluorenes are excellent OLED materials, and are controlled anisotropy of light-emission when molecules are oriented parallel or normal to the substrate surface. Especially, the polarized emission has occurred by uniaxial orientation of these crystals in the film. Here, we propose the concept of novel OLED prepared by orientation control and crystal growth techniques.
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Susumu Ikeda, Yasuo Wada, Katsuhiko Inaba, Kazuo Terashima, Toshihiro ...
Article type: Article
2009 Volume 35 Issue 4 Pages
243-248
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Organic semiconductors have attracted much attention as key materials to realize plastic electronics, and thin film transistors (TFTs) using organic semiconductors are present target in this research field. However, randomly oriented polycrystalline films grown on amorphous gate insulator show a much lower carrier mobility than that of single crystals and this is one of the problems to make organic TFTs. To improve the mobility, control of in-plane orientation of the thin films on amorphous substrates is required. In this review, the concept of "graphoepitaxy" is introduced as a way to control the in-plane orientation, and application of graphoepitaxy to organic semiconductor sexithiophene is reported.
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Kenji Itaka, Seiichiro Yaginuma, Hideomi Koinuma
Article type: Article
2009 Volume 35 Issue 4 Pages
249-254
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The observation of reflection high energy electron diffraction (RHEED) oscillations has been proved to be a key to open the nano material sciences, since it definitely verifies that the film growth proceeds in layer-by-layer mode with each layer thickness control. This enabled us to fabricate nano-engineered heterojunctions and devices as commonly practiced for conventional semiconductors and metals. Here we report on the first observation of clear RHEED intensity oscillation in thin film fabrication of a p-conjugated molecular solid. The key points for the oscillation observation, continuous-wave infrared laser MBE and requirement for layer-by-layer growth, will be discussed.
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Takeo Minari, Kazuhito Tsukagoshi
Article type: Article
2009 Volume 35 Issue 4 Pages
255-261
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Effective use of self-organizing feature of organic molecular semiconductors for fabrication of electronic devices provides a new route for large area and printable electronics. In order to greatly use the functionalities of organic molecules for bottom-up fabrication of organic semiconductor devices, we have developed a surface selective deposition technique which gives us an ability to simultaneously fabricate a number of organic transistors directly self-organized from solution phase. In this report, the principle of the area-selective growth of organic semiconductor crystals and the application for organic transistor devices are presented.
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Jun Takeya
Article type: Article
2009 Volume 35 Issue 4 Pages
262-270
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Development of organic semiconductor transistors is under rapid progress, motivated by their potential applications to next-generation low-cost electronic devices. This article describes "organic single-crystal" transistors, in which systems of periodically arranged molecules govern the charge transport. Therefore, more ideal transistor performance can be expected without disordered structures and/or grain boundaries which most of popular thin-film transistors suffer. The best mobility of the single-crystal transistors indeed reach as high as 40cm^2/Vs, which is one order higher than those of the best polycrystalline devices. I discuss herein the fabrication method of the single-crystal transistors, the high-performance characteristics, and the mechanisms to realize the high conductivity based on results of our Hall effect measurements.
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Noriyuki Yoshimoto
Article type: Article
2009 Volume 35 Issue 4 Pages
271-275
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The in-plane structures of vapor deposited ultrathin films of principal organic semiconductors were characterized by grazing incidence x-ray diffractometry (GIXD). Polymorphic behavior of pentacene thin films is obverted by GIXD, Consistency of determined interplanar spacings of the two polymorphs suggests the epitaxial growth that bulk phase grows onto thin-film phase. As to DS-4T and its derivatives with different end-cap groups, the morphology and film structure change with the nature of end-cap groups. The increase in volume of end-cap group causes the decrease in crystallinity and increase in frequency in nucleation. These characteristics could affect to the transport properties in OTFTs.
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Koichi Kakimoto
Article type: Article
2009 Volume 35 Issue 4 Pages
276-
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Article type: Appendix
2009 Volume 35 Issue 4 Pages
277-283
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Article type: Appendix
2009 Volume 35 Issue 4 Pages
284-290
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2009 Volume 35 Issue 4 Pages
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2009 Volume 35 Issue 4 Pages
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2009 Volume 35 Issue 4 Pages
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2009 Volume 35 Issue 4 Pages
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2009 Volume 35 Issue 4 Pages
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Article type: Appendix
2009 Volume 35 Issue 4 Pages
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