Abstract
This paper reports the determination factor of velocity of crystal growth of silicon and silicon carbide (SiC). We studied growth methods of Czochralski and physical vapor deposition for silicon and SiC, respectively. The growth velocity of silicon is determined by heat flux conservation based on temperature gradient in both a crystal and a melt since growth interface is formed by a rough interface. Crystal growth of SiC is based on spies transport from a source to a seed crystal. Therefore, the growth velocity is determined by a supersaturation of the species near the seed crystal. The range of super saturation is about 5 to 20% in the case of sublimation method of SiC.
