Journal of the Japanese Association for Crystal Growth

Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275

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Volume 38, Issue 2

Displaying 1-26 of 26 articles from this issue

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[title in Japanese]

Article type: Cover
2011 Volume 38 Issue 2 Pages Cover1-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_Cover1

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[title in Japanese]

Article type: Index
2011 Volume 38 Issue 2 Pages Toc1-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_Toc1

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[title in Japanese]

Article type: Index
2011 Volume 38 Issue 2 Pages Toc2-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_Toc2

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[title in Japanese]

Article type: Index
2011 Volume 38 Issue 2 Pages Toc3-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_Toc3

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[title in Japanese]

Article type: Index
2011 Volume 38 Issue 2 Pages Toc4-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_Toc4

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 83-84
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_83

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How Do we Model Crystal Growth Phenomena?(Preface)

Masahide Sato, Yoshihisa Suzuki

Article type: Article
2011 Volume 38 Issue 2 Pages 85-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_85

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Relationship between Heat and Mass Transfer and Growth Velocity during Growth of Bulk Crystals(<Special Topic>How Do We Model Crystal Growth Phenomena?)

Koichi Kakimoto, Bing Gao, Satoshi Nakano, Yoshihiro Kangawa

Article type: Article
2011 Volume 38 Issue 2 Pages 86-92
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_86

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This paper reports the determination factor of velocity of crystal growth of silicon and silicon carbide (SiC). We studied growth methods of Czochralski and physical vapor deposition for silicon and SiC, respectively. The growth velocity of silicon is determined by heat flux conservation based on temperature gradient in both a crystal and a melt since growth interface is formed by a rough interface. Crystal growth of SiC is based on spies transport from a source to a seed crystal. Therefore, the growth velocity is determined by a supersaturation of the species near the seed crystal. The range of super saturation is about 5 to 20% in the case of sublimation method of SiC.

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Pattern Formation from a Rapidly-cooling Supercooled Melt Droplet 4.6 Billion Years Ago(<Special Topic>How Do We Model Crystal Growth Phenomena?)

Hitoshi Miura

Article type: Article
2011 Volume 38 Issue 2 Pages 93-102
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_93

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Various kinds of crystals are contained in meteorites and comets in our solar system. They were formed in early solar system 4.6 billion years ago, and have unique features reflecting the peculiar crystal growth environment in space. It would be possible to imagine the history of our solar system by elucidating the origin of these cosmic crystals. In the present paper, we briefly review the traditional researches on formation of chondrules, which are submillimeter-sized, spherical-shaped grains consisting mainly of silicate material observed in chondritic meteorites. Then, we explain the relationship between the solidication texture of chondrules and the pattern formation of a supercooled melt droplet during rapid cooling.

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Phase Field Model for Simulating Microstructure Formation and Microscopic Stress Distribution(<Special Topic>How Do We Model Crystal Growth Phenomena?)

Takuya Uehara

Article type: Article
2011 Volume 38 Issue 2 Pages 103-108
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_103

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Phase field model for simulating microstructure formation of metallic materials is introduced. This model is consistent with various kinds of physical and chemical energetics, and has been spread for various purposes. In this article, the coupling with the mechanics is focused, and microscopic stress distributions in several complicated microstructures, such as dendrite, cellular structure, and polycrystalline structures, are presented. The coupled method is also extended to the multiphase-field model, and the stress dependency of the microstructure morphology in polycrystalline materials is demonstrated. These numerical methods are expected to be applied to the material and process design in practical engineering purposes.

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Step Zipping on the Vicinal Surface Near Equilibrium : Role of the Singularity in the Anisotropic Surface Free Energy(<Special Topic>How Do We Model Crystal Growth Phenomena?)

Noriko Akutsu

Article type: Article
2011 Volume 38 Issue 2 Pages 109-113
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_109

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The anisotropic surface free energy on the vicinal surface of the restricted solid-on-solid model with inter-step attractions of the point contact type (p-RSOS model) is calculated statistical mechanically. The step-zipping process near equilibrium at low temperature is demonstrated by use of Monte Carlo simulations with Metropolis algorithm. We show that the zipping process is caused by the singular property of the surface free energy, though the model contains no long range interaction such as elastic inter-actions among steps.

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A Study by the Monte Carlo Simulation for Predicting the Chemical Composition of a Growing Crystal : an Example of a Binary Solid Solution(<Special Topic>How Do We Model Crystal Growth Phenomena?)

Kiiko Katsuno, Toshiharu Irisawa, Masao Kitamura

Article type: Article
2011 Volume 38 Issue 2 Pages 114-120
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_114

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Predicting the composition of a solid solution during its growth has been one of the principal themes in the study of crystal growth. The interface kinetics, which influences the element partitioning between a crystal and mother phases, has been poorly understood in spite of many theoretical and experimental studies. In the present paper, we introduce our recent study of the Monte Carlo simulation which was applied to clarify the essential processes for the incorporation of atoms on growth layers of a binary ideal solid solution growing from its vapor. The simulation reveals that the detachment of atoms from terrace sites, especially around kink sites, strongly controls the bulk composition of a growing solid solution.

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Growth Modes with Misfit Dislocations in Heteroepitaxy(<Special Topic>How Do We Model Crystal Growth Phenomena?)

Hiroyasu Katsuno, Makio Uwaha, Yukio Saito

Article type: Article
2011 Volume 38 Issue 2 Pages 121-127
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_121

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We study equilibrium shapes of adsorbate crystals by allowing a possibility of dislocations on an elastic substrate in a two-dimensional lattice model. On a flat adsorbate surface with a periodic array of misfit dislocations, the preferential adsorption site is found to be either on the top or at the midpoint of the dislocations depending on the sign of the force dipole moment of the adatom and the sign of the misfit parameter. From the equilibrium shapes determined for various coverages, we infer the growth mode. As the misfit parameter increases, the growth mode changes from the Frank-van der Merwe (FM) to the Stranski-Krastanov (SK), further to the FM with dislocations for a parameter range of ordinary semiconductor materials. Conceivable growth modes such as the SK with dislocations appear in a parameter range between the SK and the FM with dislocations.

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Theoretical Analysis for the Composition of GaAsN Grown by Vapor Phase Epitaxy(<Special Topic>How Do We Model Crystal Growth Phenomena?)

Jun Kawano, Yoshihiro Kangawa, Tomoe Yayama, Tomonori Ito, Koichi Kaki ...

Article type: Article
2011 Volume 38 Issue 2 Pages 128-136
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_128

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Theoretical analysis for the epitaxial growth of GaAs_<1-x>N_x from vapor phase was performed by thermodynamic analysis and the first-principles calculations for growth surface. The calculated results suggest that the incorporation of nitrogen is suppressed by the effect of the lattice constraint from Ge substrate, and is promoted by increasing the input partial pressure of group-III element. And first-principles-based calculations for the growth surface under H_2 atmosphere show that nitrogen is easier to substitute for As in the surface site bonded with hydrogen, which could be the origin of H-related defects in a thin film. These results obtained by the theoretical analysis provide information on the suitable growth conditions for the growth of this material with high quality.

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Quantum Mechanical Approach for Elementary Processes of Epitaxial Growth(<Special Topic>How Do We Model Crystal Growth Phenomena?)

Toru Akiyama, Kohji Nakamura, Tomonori Ito

Article type: Article
2011 Volume 38 Issue 2 Pages 137-143
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_137

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Recent progress in computing power and computational physics techniques enables us to clarify epitaxial growth processes by performing first-principles calculations which only requires atomic numbers as computational parameters. Here, we review recent theoretical studies based on first-principles calculations and present its versatility to clarify elementary processes of epitaxial growth in atomic scale. The simulation methods based on quantum mechanical approach and its applications to clarify dynamical processes of epitaxial growth are also presented.

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The 3rd Annual Meeting of Growth of III-Nitrides(News of JACG)

Yoshihiro Kangawa

Article type: Article
2011 Volume 38 Issue 2 Pages 144-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_144

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In Memory of Prof. Winfried Schroder

Peter Rudolph, Anke Luedke

Article type: Article
2011 Volume 38 Issue 2 Pages 145-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_145

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 146-151
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_146

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[title in Japanese]

[in Japanese]

Article type: Article
2011 Volume 38 Issue 2 Pages 152-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_152

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 153-154
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_153

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 154-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_154

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 155-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_155_1

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 155-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_155_2

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 155-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_155_3

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 156-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_156

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[title in Japanese]

Article type: Appendix
2011 Volume 38 Issue 2 Pages 157-
Published: 2011
Released on J-STAGE: May 31, 2017

DOIhttps://doi.org/10.19009/jjacg.38.2_157

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