垂直ブリッジマン法による機能性単結晶成長(<特集>機能性単結晶の最近の進展)

抄録

Improved vertical Bridgman growth techniques for various kinds of single crystal are introduced and discussed. In the first, compound semiconductors of GaAs and InP are grown by the liquid encapsulated vertical Bridgman growth technique, using pyrolytic boron nitride crucibles, and the role of liquid boric oxide (B_2O_3) is discussed from the viewpoints of the single crystal growth and the elimination of dislocations. In the second, various kinds of oxide crystals, such as LiNbO_3, La_3Ga_5SiO_<14>, La_3Ta_<0.5>Ga_<5.5>O_<14,> and KNbO_3, are grown by the vertical Bridgman growth technique using platinum crucibles, and the problems of adherence between the crucibles and crystals grown in them are discussed. In the third, α-Al_2O_3 (sapphire) and α-Al_2O_3/YAG:Ce eutectics are grown by the vertical Bridgman growth technique using iridium, molybdenum and tungsten crucibles, and the linear thermal expansion coefficients of the crystals grown and the crucibles used are discussed from the viewpoint of crystal release from the crucible and reuse of the crucible.