抄録
Dislocation-mediated strain relaxation during lattice-mismatched InGaAs/GaAs(001) heteroepitaxy was studied through in situ x-ray reciprocal space mapping (in situ RSM). At the synchrotron facility SPring-8, a hybrid system of molecular beam epitaxy and x-ray diffractometry with a two-dimensional detector enabled us to perform in situ RSM at highspeed and high-resolution. Using this experimental setup, the strain relaxation processes were classified into four thickness ranges with different dislocation behavior. In order to discuss this observation quantitatively, a strain relaxation model was proposed based on the Dodson-Tsao's kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. In addition to the single InGaAs layer, strain relaxation processes in multi-layer structures are discussed.
