GaN系量子殻構造の成長と光学特性評価

抄録

  Growth and optical properties of GaN nanowires (NWs) and related technologies are discussed, in terms of their applications to optoelectronic devices. Although few reports regarding GaN-based NWs applied to laser diodes have been published, it will atract much attentions in the near future. This paper presents that GaN NWs and surounding multi-quantum-shell (MQS) active medium have a high potential to improve the performance of lasers because of its high 3D optical cofinement factor. To grow GaN NWs with (0001) tip-plane, pulsed mode MOVPE, which provides effectively very low V/III ratios, and relatively high growth temperature are essential. The formation of (0001) tip-plane improves the composition uniformity of GaInN/GaN MQS. PL intentisy per excited volume from MQS is comparable to that from conventional 2D MQW. The GaN NWs and MQS will provide us a next generation platform of optoelectronic devices.