Growth and Impurity Doping of Group IV Semiconductor Nanowires

Abstract

  A considerable amount of research has been done regarding one dimensional semiconductor nanowires. In particular, group-IV semiconductor nanowires such as silicon and germanium nanowires (SiNWs and GeNWs) have attracted attention as NW-based devices are of interest for their compatibility with present Si complementary metal-oxide semiconductors (CMOS) integrated circuit technology. Here I will report the growth and impurity doping of group-IV semiconductor NWs. Laser ablation and chemical vapor deposition methods using vapor-liquid-solid growth mechanism will be discussed. Impurity doping is one of the important techniques to functionalize NWs. The crucial point is how the states of impurity atoms can be clarified. I will introduce results characterized by Raman scattering and electron spin resonance, showing that B and P atoms were doped and electrically activated in SiNWs and GeNWs. Finally, data for core-shell NWs using Si and Ge will be introduced, which are expected to be of use in next generation high-speed transistor channels.