自己触媒VLS成長法によるInP/InAsナノワイヤヘテロ構造

抄録

  One crucial challenge for semiconductor nanowires has been the development of a complementary metal–oxide–semiconductor (CMOS)-compatible synthesis approach which produces semiconductor heterostructure nanowire with excellent optical and electrical properties. This remains challenging mostly because gold (Au), which is widely used as a catalyst particle when nanowires are synthesized with the bottom-up vapor-liquid-solid (VLS) approach¹, is not permitted in the mainstream CMOS process as Au is highly detrimental to the performance of minority carrier electronic devices^{2, 3}. Here we describe the growth, structural and optical properties of InP, InAs and InP/InAs heterostructure nanowires by developing an Au-free indium-particle-catalyzed (or self-catalyzed) VLS approach. The nanowire exhibits excellent optical property, enabling lasing operation with tunable lasing wavelength range in full telecom band at room temperature. We also present a novel approach to form the site-defined InP/InAs nanowires by combining bottom-up self-assembly with top-down micro-photolithography technique. We have also revealed a distinct growth phenomenon of self-catalyzed VLS approach that the catalyst particle size (thus, the nanowire diameter) can be tailored by modulating V/III flow ratio during the growth process.