解説
Si多結晶の固液界面における粒成長挙動
2020 年 47 巻 2 号 論文ID: 47-2-04
詳細
2020 年 47 巻 2 号 論文ID: 47-2-04
Grain growth behaviors at a crystal/melt interface of multi-crystalline silicon are introduced in this article. It will be explained how the understanding of this phenomena has been progressed to date. The experimental results by in situ observations will be presented. The importance of growth kinetics at a grain boundary groove on the grain growth behavior will be shown.
