Estimating efficiency of AlGaN light-emitting diodes with numerical simulations

抄録

  Simulation of AlGaN-based UV and deep-UV light-emitting diodes with one-dimensional drift-diffusion method is discussed, with model accounting for polarization charge and ABC recombination. It is shown that the results of simulations with this model agree with experimental results for this class of devices, provided that the parameters of the model are properly matched to the underlying material. In particular, IV characteristics and LI characteristics are taken into account. ABC recombination constants are calculated based on comparison with experimental results. The simulations of the deep-UV LED efficiency in case of significant electron escape are then presented. The impact of EBL length and barrier between quantum wells and the EBL is discussed. Moreover, it is shown that improving p-type conductivity by introducing polarization-doped p-type region leads to significant improvement of the internal quantum efficiency.