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  We propose and demonstrate one-dimensional doping with using a one-dimensional surface structure such as Bi nanolines/Si(001) as a dopant, where the process is mainly based on autosurfactant. Surfactants in heteroepitaxy are catalytic elements that float up to the surface during growth to control the energetics/kinetics of adatoms. “Autosurfactants” are exceptional in that the surfactant action is self-contained without foreign species. Here, autosurfactants play a role of surface-segregation quenchers: Bi, a dopant with a strong surface-segregation tendency in Si, is utilized to lock otherwise elusive Bi adatoms themselves to the Si lattice underneath during molecular beam epitaxy. We realize another one dimensional doping of Mn into Si/Ge interfaces using Mn atomic chains on Si(001) as a dopant. Doping methods based on the burial of surface nanostructures in epitaxial layers allow the realization of systems for where conventional doping methods fail.