One of the fundamental issues in the fabrication of μ-LED display using bottom-up crystal growth process is the low luminous efficiency of red LED, and further development of GaInN crystal growth technology is required. We have studied on the possibility of the structure in which GaInN/GaInN multiple quantum wells (MQWs) are inserted in pn-GaInN matrix, instead of the structure with GaInN/GaN MQWs in pn-GaN. This structure is expected to suppress the generation of crystal defects in the MQWs due to large lattice mismatch. This is also expected to increase the probability of electron-hole recombination and the large wavelength shift due to the quantum confined Stark effect (QCSE). In this article, we introduce our studies on the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN, especially on (i) a novel growth method of DERI (Droplet Elimination by Radical Beam Epitaxy) for the growth of film structure, (ii) in-situ monitoring and control in the initial heteroepitaxial growth using synchrotron X-ray diffraction (XRD) and (iii) nanocolumns and its device application.
