中性子半導体検出器に向けたBGaN半導体デバイスの開発

抄録

  Group-III nitride semiconductors such as gallium nitride (GaN) have been investigated for various applications such as short wavelength light emitting devices and power devices due to their excellent material properties such as wide band-gap. We have proposed a neutron semiconductor detector using BGaN as a new possibility using such group-III nitride semiconductors. Boron (B) atoms have a large neutron capture cross section, which allows neutrons to be captured in semiconductors and thus has potential applications as a neutron imaging sensor. In this paper, we present the concept, principle of operation, and research progress of such a novel neutron sensing device. In particular, the development of a thick BGaN film growth technique with suppressed gas phase reaction and the detection of neutron capture signals achieve by thick BGaN diodes is presented.