Effect of Types of Ga/Si(111) Reconstructed Structure on Growth Morphology of GaSb Island

Ryuto Machida; Ryusuke Toda; Keisuke Yoshiki; Shinsuke Hara; Katsumi Irokawa; Hirofumi Miki; Akira Kawazu; Hiroki I. Fujishiro

doi:10.56646/jjapcp.1.0_011001

20th International Colloquium on Scanning Probe Microscopy

Session ID : 011001

DOI https://doi.org/10.56646/jjapcp.1.0_011001

Conference information

Host: The Japan Society of Applied Physics

Name : 20th International Colloquium on Scanning Probe Microscopy

Location : Okinawa, Japan

Date : December 17, 2012 - December 19, 2012

Effect of Types of Ga/Si(111) Reconstructed Structure on Growth Morphology of GaSb Island

Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Shinsuke Hara, Katsumi Irokawa, Hirofumi Miki, Akira Kawazu, Hiroki I. Fujishiro

Author information

Ryuto Machida
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
Ryusuke Toda
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
Keisuke Yoshiki
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
Shinsuke Hara
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
Katsumi Irokawa
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
Hirofumi Miki
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
Akira Kawazu
Faculty of Science and Engineering, Tokyo Denki University, Hatoyama, Saitama 350-0394, Japan
Hiroki I. Fujishiro
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan

CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

The effect of several types of the Ga/Si(111) reconstructed structure, which is used as a template for epitaxial growth, on the growth morphology of GaSb islands have been studied by ultrahigh-vacuum scanning tunneling microscopy and non-contact atomic force microscopy. The polygonal islands are spread over a wide surface area, although the large dome-shaped islands are locally formed on - and -Ga. The growth process is also changed by the types of template Ga/Si(111) surface. It is suggested that initial growth state affects the growth morphology and process of GaSb island.

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